TY  - JOUR
AU  - Tschersich, K. G.
AU  - Littmark, U.
AU  - Beyer, W.
TI  - Adjustable hydrogen atom incorporation into sputter desposited a-SiC
JO  - Thin solid films
VL  - 515
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-54465
SP  - 464 - 467
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds. (c) 2005 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000241220600019
DO  - DOI:10.1016/j.tsf.2005.12.296
UR  - https://juser.fz-juelich.de/record/54465
ER  -