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@ARTICLE{Tschersich:54465,
author = {Tschersich, K. G. and Littmark, U. and Beyer, W.},
title = {{A}djustable hydrogen atom incorporation into sputter
desposited a-{S}i{C}},
journal = {Thin solid films},
volume = {515},
issn = {0040-6090},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {PreJuSER-54465},
pages = {464 - 467},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {Thin films of a-Si0.8C0.2:H are deposited by ion beam
sputtering combined with the simultaneous irradiation of
hydrogen atoms delivered by a thermal hydrogen atom source.
Elemental composition and bonding structure of the films are
analysed by XPS, RBS, ERD, and FTIR. The hydrogen
concentration can be varied in a controlled manner. Up to
concentrations of $5\%,$ the hydrogen is exclusively
incorporated in single Si-H bonds. (c) 2005 Elsevier B.V.
All rights reserved.},
keywords = {J (WoSType)},
cin = {IPV / ISG-4},
ddc = {070},
cid = {I:(DE-Juel1)VDB46 / I:(DE-Juel1)VDB421},
pnm = {Erneuerbare Energien / Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK401 / G:(DE-Juel1)FUEK414},
shelfmark = {Materials Science, Multidisciplinary / Materials Science,
Coatings $\&$ Films / Physics, Applied / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000241220600019},
doi = {10.1016/j.tsf.2005.12.296},
url = {https://juser.fz-juelich.de/record/54465},
}