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024 7 _ |2 DOI
|a 10.1016/j.tsf.2005.12.296
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041 _ _ |a eng
082 _ _ |a 070
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Tschersich, K. G.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB34109
245 _ _ |a Adjustable hydrogen atom incorporation into sputter desposited a-SiC
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2006
300 _ _ |a 464 - 467
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Thin Solid Films
|x 0040-6090
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|v 515
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds. (c) 2005 Elsevier B.V. All rights reserved.
536 _ _ |a Erneuerbare Energien
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588 _ _ |a Dataset connected to Web of Science
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653 2 0 |2 Author
|a amorphous materials
653 2 0 |2 Author
|a sputtering
653 2 0 |2 Author
|a hydrogen
653 2 0 |2 Author
|a infrared spectroscopy
700 1 _ |a Littmark, U.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB58263
700 1 _ |a Beyer, W.
|b 2
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773 _ _ |a 10.1016/j.tsf.2005.12.296
|g Vol. 515, p. 464 - 467
|p 464 - 467
|q 515<464 - 467
|0 PERI:(DE-600)1482896-0
|t Thin solid films
|v 515
|y 2006
|x 0040-6090
856 7 _ |u http://dx.doi.org/10.1016/j.tsf.2005.12.296
909 C O |o oai:juser.fz-juelich.de:54465
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914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
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|d 31.12.2006
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