TY  - JOUR
AU  - Mustafa, J.
AU  - Rüdiger, A.
AU  - Waser, R.
TI  - Comparison of three different architectures for active resistive memories
JO  - AEU - International Journal of Electronics and Communications
VL  - 61
SN  - 1434-8411
CY  - München
PB  - Elsevier
M1  - PreJuSER-56544
SP  - 345 - 352
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. (C) 2006 Elsevier GmbH. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000246399600011
DO  - DOI:10.1016/j.aeue.2006.06.004
UR  - https://juser.fz-juelich.de/record/56544
ER  -