Journal Article PreJuSER-56544

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Comparison of three different architectures for active resistive memories

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2007
Elsevier München

AEU - International Journal of Electronics and Communications 61, 345 - 352 () [10.1016/j.aeue.2006.06.004]

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Abstract: Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. (C) 2006 Elsevier GmbH. All rights reserved.

Keyword(s): J ; hysteretic resistive elements (auto) ; RRAM (auto) ; memory architecture (auto)


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektronische Materialien (IFF-6)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
  3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007
Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Document types > Articles > Journal Article
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
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Publications database

 Record created 2012-11-13, last modified 2018-02-11



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