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Journal Article | PreJuSER-56544 |
; ;
2007
Elsevier
München
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Please use a persistent id in citations: doi:10.1016/j.aeue.2006.06.004
Abstract: Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. (C) 2006 Elsevier GmbH. All rights reserved.
Keyword(s): J ; hysteretic resistive elements (auto) ; RRAM (auto) ; memory architecture (auto)
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