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@ARTICLE{Mustafa:56544,
author = {Mustafa, J. and Rüdiger, A. and Waser, R.},
title = {{C}omparison of three different architectures for active
resistive memories},
journal = {AEU - International Journal of Electronics and
Communications},
volume = {61},
issn = {1434-8411},
address = {München},
publisher = {Elsevier},
reportid = {PreJuSER-56544},
pages = {345 - 352},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {Resistive memory (RRAM) is one of the strong emerging
technologies in modern memory field. This type of memories
has the potential to be the replacement of several current
memory types. As any new technology, RRAM brings new
challenges concerning technology and design. This work
discusses some aspects concerning the design of active
resistive memories and compares three possible memory
architectures. (C) 2006 Elsevier GmbH. All rights reserved.},
keywords = {J (WoSType)},
cin = {IFF-6 / CNI / JARA-FIT},
ddc = {004},
cid = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic /
Telecommunications},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000246399600011},
doi = {10.1016/j.aeue.2006.06.004},
url = {https://juser.fz-juelich.de/record/56544},
}