Journal Article

PreJuSER-56578

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Performance optimization of GaAs-based photomixers as sources of THz radiation

Kordos, P.FZJ* ; Marso, M.FZJ* ; Mikulics, M.FZJ*

2007
Springer Berlin

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Please use a persistent id in citations: doi:10.1007/s00339-007-3909-9

Abstract: The performance optimization of GaAs-based photomixers using novel device structures is reported. Low-temperature grown (LT) GaAs devices with recessed interdigitated finger contacts, which improve the electric field distribution in the active region, were investigated. Further, the devices with an enhanced mixing area using finger contacts integrated into the coplanar stripline were experimentally verified. The output power of such photomixers was twice of that with conventional surface contacts. High-energy nitrogen implanted GaAs was used as an alternative to LT GaAs, and a further increase of the output power was observed. Measured power level of 2.6 mu W at 850 GHz was higher than that reported before for any photomixer in the THz region.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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