%0 Journal Article
%A Emtsev, V. V.
%A Ehrhart, P.
%A Emtsev, K. V.
%A Poloskin, D. S.
%A Dedek, U.
%T Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
%J Physica / B
%V 376-377
%@ 0921-4526
%C Amsterdam
%I North-Holland Physics Publ.
%M PreJuSER-57493
%P 173 - 176
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000237329500043
%R 10.1016/j.physb.2005.12.046
%U https://juser.fz-juelich.de/record/57493