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| Journal Article | PreJuSER-57493 |
; ; ; ;
2006
North-Holland Physics Publ.
Amsterdam
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Please use a persistent id in citations: doi:10.1016/j.physb.2005.12.046
Abstract: Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V.
Keyword(s): J ; silicon (auto) ; electron irradiation (auto) ; radiation-produced defects (auto)
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