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000057493 084__ $$2WoS$$aPhysics, Condensed Matter
000057493 1001_ $$0P:(DE-HGF)0$$aEmtsev, V. V.$$b0
000057493 245__ $$aDefect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
000057493 260__ $$aAmsterdam$$bNorth-Holland Physics Publ.$$c2006
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000057493 440_0 $$04907$$aPhysica B: Condensed Matter$$v376-377$$x0921-4526
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000057493 520__ $$aRadiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V.
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000057493 65320 $$2Author$$asilicon
000057493 65320 $$2Author$$aelectron irradiation
000057493 65320 $$2Author$$aradiation-produced defects
000057493 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b1$$uFZJ
000057493 7001_ $$0P:(DE-HGF)0$$aEmtsev, K. V.$$b2
000057493 7001_ $$0P:(DE-HGF)0$$aPoloskin, D. S.$$b3
000057493 7001_ $$0P:(DE-Juel1)VDB34566$$aDedek, U.$$b4$$uFZJ
000057493 773__ $$0PERI:(DE-600)1466579-7$$a10.1016/j.physb.2005.12.046$$gVol. 376-377, p. 173 - 176$$p173 - 176$$q376-377<173 - 176$$tPhysica / B$$v376-377$$x0921-4526$$y2006
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