TY  - JOUR
AU  - Emtsev, V. V.
AU  - Ehrhart, P.
AU  - Emtsev, K. V.
AU  - Poloskin, D. S.
AU  - Dedek, U.
TI  - Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
JO  - Physica / B
VL  - 376-377
SN  - 0921-4526
CY  - Amsterdam
PB  - North-Holland Physics Publ.
M1  - PreJuSER-57493
SP  - 173 - 176
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000237329500043
DO  - DOI:10.1016/j.physb.2005.12.046
UR  - https://juser.fz-juelich.de/record/57493
ER  -