% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Emtsev:57493,
author = {Emtsev, V. V. and Ehrhart, P. and Emtsev, K. V. and
Poloskin, D. S. and Dedek, U.},
title = {{D}efect production in heavily doped n-{S}i irradiated with
fast electrons at cryogenic temperatures},
journal = {Physica / B},
volume = {376-377},
issn = {0921-4526},
address = {Amsterdam},
publisher = {North-Holland Physics Publ.},
reportid = {PreJuSER-57493},
pages = {173 - 176},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {Radiation-produced defects in heavily doped n-Si with
charge carriers concentrations n >= 3 x 10(18)cm(-3) are
investigated. The results obtained in these radiation
experiments provided evidence that most Frenkel pairs
produced after 2.5 MeV electron irradiation at T = 4.2 K are
present in irradiated materials but they are not seen in
electrical measurements. At room temperature a majority of
Frenkel pairs produced are separated into the constituent
defects forming impurity-related complexes. Two prominent
stages of defect annealing are observed at temperatures
above T = 300K. Complete recovery of the concentration and
mobility of charge carriers in irradiated materials takes
place around T = 800 K. (c) 2005 Published by Elsevier B.V.},
keywords = {J (WoSType)},
cin = {IFF-IEM},
ddc = {530},
cid = {I:(DE-Juel1)VDB321},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK414},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000237329500043},
doi = {10.1016/j.physb.2005.12.046},
url = {https://juser.fz-juelich.de/record/57493},
}