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| 001 | 57493 | ||
| 005 | 20180211173240.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.physb.2005.12.046 |
| 024 | 7 | _ | |2 WOS |a WOS:000237329500043 |
| 037 | _ | _ | |a PreJuSER-57493 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Emtsev, V. V. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures |
| 260 | _ | _ | |a Amsterdam |b North-Holland Physics Publ. |c 2006 |
| 300 | _ | _ | |a 173 - 176 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physica B: Condensed Matter |x 0921-4526 |0 4907 |v 376-377 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n >= 3 x 10(18)cm(-3) are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T = 4.2 K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T = 300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T = 800 K. (c) 2005 Published by Elsevier B.V. |
| 536 | _ | _ | |a Kondensierte Materie |c P54 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK414 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a silicon |
| 653 | 2 | 0 | |2 Author |a electron irradiation |
| 653 | 2 | 0 | |2 Author |a radiation-produced defects |
| 700 | 1 | _ | |a Ehrhart, P. |b 1 |u FZJ |0 P:(DE-Juel1)VDB3072 |
| 700 | 1 | _ | |a Emtsev, K. V. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Poloskin, D. S. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Dedek, U. |b 4 |u FZJ |0 P:(DE-Juel1)VDB34566 |
| 773 | _ | _ | |a 10.1016/j.physb.2005.12.046 |g Vol. 376-377, p. 173 - 176 |p 173 - 176 |q 376-377<173 - 176 |0 PERI:(DE-600)1466579-7 |t Physica / B |v 376-377 |y 2006 |x 0921-4526 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.physb.2005.12.046 |
| 909 | C | O | |o oai:juser.fz-juelich.de:57493 |p VDB |
| 913 | 1 | _ | |k P54 |v Kondensierte Materie |l Kondensierte Materie |b Materie |z entfällt bis 2009 |0 G:(DE-Juel1)FUEK414 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)90467 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
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