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000057723 041__ $$aeng
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000057723 084__ $$2WoS$$aEngineering, Electrical & Electronic
000057723 084__ $$2WoS$$aPhysics, Applied
000057723 084__ $$2WoS$$aPhysics, Condensed Matter
000057723 1001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b0$$uFZJ
000057723 245__ $$aA model for a resistive switch memory cell with rechargeable space charge
000057723 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2007
000057723 300__ $$a113 - 120
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000057723 440_0 $$02659$$aIntegrated Ferroelectrics$$v90$$x1058-4587
000057723 500__ $$aRecord converted from VDB: 12.11.2012
000057723 520__ $$aAn advanced leakage current model combining the electronic carrier injection/ejection at the electrode interfaces (described by thermionic emission) with the film conduction properties of a thin dielectric film (modelled as wide band gap semiconductor) is used to describe the current-voltage (IN) curve of a flash-like resistive switch memory cell. Such a cell consists of a metal-insulator-metal capacitor structure with some embedded charge storage elements within the dielectric, e.g. a floating electrode (like in the gate of a "Flash") or some metallic ions or clusters, which can be charged or discharged by an applied voltage or current or by a "redox" reaction. The resulting different conductance levels can be used for a resistive switching memory cell. This contribution presents calculated simulation results on IN curves in dependence on polarity and concentration of the stored charge as well as on other parameters such as dielectric constant, background homogeneous defect densities in the dielectric and electrode properties. These parameters show a large influence on the switching ratio S = R(high)/R(low), an important parameter for the application in a device.
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000057723 650_7 $$2WoSType$$aJ
000057723 65320 $$2Author$$aresistive switching
000057723 65320 $$2Author$$aorganic dielectric
000057723 65320 $$2Author$$ahigh permittivity oxides
000057723 65320 $$2Author$$amemory
000057723 65320 $$2Author$$amodel simulation
000057723 65320 $$2Author$$aleakage current
000057723 773__ $$0PERI:(DE-600)2037916-X$$a10.1080/10584580701249413$$gVol. 90, p. 113 - 120$$p113 - 120$$q90<113 - 120$$tIntegrated ferroelectrics$$v90$$x1058-4587$$y2007
000057723 8567_ $$uhttp://dx.doi.org/10.1080/10584580701249413
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000057723 9141_ $$y2007
000057723 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000057723 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000057723 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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