Journal Article

PreJuSER-57723

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A model for a resistive switch memory cell with rechargeable space charge

Schroeder, H.FZJ*

2007
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/10584580701249413

Abstract: An advanced leakage current model combining the electronic carrier injection/ejection at the electrode interfaces (described by thermionic emission) with the film conduction properties of a thin dielectric film (modelled as wide band gap semiconductor) is used to describe the current-voltage (IN) curve of a flash-like resistive switch memory cell. Such a cell consists of a metal-insulator-metal capacitor structure with some embedded charge storage elements within the dielectric, e.g. a floating electrode (like in the gate of a "Flash") or some metallic ions or clusters, which can be charged or discharged by an applied voltage or current or by a "redox" reaction. The resulting different conductance levels can be used for a resistive switching memory cell. This contribution presents calculated simulation results on IN curves in dependence on polarity and concentration of the stored charge as well as on other parameters such as dielectric constant, background homogeneous defect densities in the dielectric and electrode properties. These parameters show a large influence on the switching ratio S = R(high)/R(low), an important parameter for the application in a device.

Keyword(s): J ; resistive switching (auto) ; organic dielectric (auto) ; high permittivity oxides (auto) ; memory (auto) ; model simulation (auto) ; leakage current (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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