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@ARTICLE{Schroeder:57723,
      author       = {Schroeder, H.},
      title        = {{A} model for a resistive switch memory cell with
                      rechargeable space charge},
      journal      = {Integrated ferroelectrics},
      volume       = {90},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-57723},
      pages        = {113 - 120},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {An advanced leakage current model combining the electronic
                      carrier injection/ejection at the electrode interfaces
                      (described by thermionic emission) with the film conduction
                      properties of a thin dielectric film (modelled as wide band
                      gap semiconductor) is used to describe the current-voltage
                      (IN) curve of a flash-like resistive switch memory cell.
                      Such a cell consists of a metal-insulator-metal capacitor
                      structure with some embedded charge storage elements within
                      the dielectric, e.g. a floating electrode (like in the gate
                      of a "Flash") or some metallic ions or clusters, which can
                      be charged or discharged by an applied voltage or current or
                      by a "redox" reaction. The resulting different conductance
                      levels can be used for a resistive switching memory cell.
                      This contribution presents calculated simulation results on
                      IN curves in dependence on polarity and concentration of the
                      stored charge as well as on other parameters such as
                      dielectric constant, background homogeneous defect densities
                      in the dielectric and electrode properties. These parameters
                      show a large influence on the switching ratio S =
                      R(high)/R(low), an important parameter for the application
                      in a device.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000246303100014},
      doi          = {10.1080/10584580701249413},
      url          = {https://juser.fz-juelich.de/record/57723},
}