%0 Journal Article
%A Mahalingam, K.
%A Eyink, K. G.
%A Brown, G. J.
%A Dorsey, D. L.
%A Kisielowski, C. F.
%A Thust, A.
%T Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution
%J Applied physics letters
%V 88
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-57838
%P 091904
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In-Ga and As-Sb contents across interfacial regions similar to 0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In-Ga sublattice. Also, atomic scale roughness within the As-Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. (c) 2006 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000235736300028
%R 10.1063/1.2178771
%U https://juser.fz-juelich.de/record/57838