Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Mahalingam, K.; Eyink, K. G.; Brown, G. J.; Thust, A.; Dorsey, D. L.; Kisielowski, C. F.

doi:10.1063/1.2178771

Journal Article

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Mahalingam, K. ; Eyink, K. G. ; Brown, G. J. ; Dorsey, D. L. ; Kisielowski, C. F. ; Thust, A.FZJ*

2006
American Institute of Physics Melville, NY

Applied physics letters 88, 091904 (2006) [10.1063/1.2178771]

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Please use a persistent id in citations: http://hdl.handle.net/2128/18017 doi:10.1063/1.2178771

Abstract: Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In-Ga and As-Sb contents across interfacial regions similar to 0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In-Ga sublattice. Also, atomic scale roughness within the As-Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. (c) 2006 American Institute of Physics.

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