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000057838 084__ $$2WoS$$aPhysics, Applied
000057838 1001_ $$0P:(DE-HGF)0$$aMahalingam, K.$$b0
000057838 245__ $$aQuantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution
000057838 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
000057838 300__ $$a091904
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000057838 440_0 $$0562$$aApplied Physics Letters$$v88$$x0003-6951
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000057838 520__ $$aEmploying the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In-Ga and As-Sb contents across interfacial regions similar to 0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In-Ga sublattice. Also, atomic scale roughness within the As-Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. (c) 2006 American Institute of Physics.
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000057838 7001_ $$0P:(DE-HGF)0$$aEyink, K. G.$$b1
000057838 7001_ $$0P:(DE-HGF)0$$aBrown, G. J.$$b2
000057838 7001_ $$0P:(DE-HGF)0$$aDorsey, D. L.$$b3
000057838 7001_ $$0P:(DE-HGF)0$$aKisielowski, C. F.$$b4
000057838 7001_ $$0P:(DE-Juel1)VDB5035$$aThust, A.$$b5$$uFZJ
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