TY  - JOUR
AU  - Mahalingam, K.
AU  - Eyink, K. G.
AU  - Brown, G. J.
AU  - Dorsey, D. L.
AU  - Kisielowski, C. F.
AU  - Thust, A.
TI  - Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution
JO  - Applied physics letters
VL  - 88
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-57838
SP  - 091904
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In-Ga and As-Sb contents across interfacial regions similar to 0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In-Ga sublattice. Also, atomic scale roughness within the As-Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. (c) 2006 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000235736300028
DO  - DOI:10.1063/1.2178771
UR  - https://juser.fz-juelich.de/record/57838
ER  -