Home > Publications database > Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution > print

001     57838
005     20240610121154.0
024 7 _ |a 10.1063/1.2178771
|2 DOI
024 7 _ |a WOS:000235736300028
|2 WOS
024 7 _ |a 2128/18017
|2 Handle
037 _ _ |a PreJuSER-57838
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Mahalingam, K.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2006
300 _ _ |a 091904
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 88
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the In-Ga and As-Sb contents across interfacial regions similar to 0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the In-Ga sublattice. Also, atomic scale roughness within the As-Sb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice. (c) 2006 American Institute of Physics.
536 _ _ |a Kondensierte Materie
|c P54
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK414
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Eyink, K. G.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Brown, G. J.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Dorsey, D. L.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Kisielowski, C. F.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Thust, A.
|b 5
|u FZJ
|0 P:(DE-Juel1)VDB5035
773 _ _ |a 10.1063/1.2178771
|g Vol. 88, p. 091904
|p 091904
|q 88<091904
|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 88
|y 2006
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.2178771
856 4 _ |u https://juser.fz-juelich.de/record/57838/files/1.2178771.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57838/files/1.2178771.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57838/files/1.2178771.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57838/files/1.2178771.jpg?subformat=icon-700
|x icon-700
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/57838/files/1.2178771.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:57838
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |k P54
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|z entfällt bis 2009
|0 G:(DE-Juel1)FUEK414
|x 0
914 1 _ |a Nachtrag
|y 2006
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
920 1 _ |k IFF-IMF
|l Mikrostrukturforschung
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB37
|x 1
970 _ _ |a VDB:(DE-Juel1)90964
980 1 _ |a FullTexts
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209
981 _ _ |a I:(DE-Juel1)PGI-5-20110106

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21