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000058048 0247_ $$2DOI$$a10.1016/j.tsf.2006.07.028
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000058048 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000058048 084__ $$2WoS$$aMaterials Science, Coatings & Films
000058048 084__ $$2WoS$$aPhysics, Applied
000058048 084__ $$2WoS$$aPhysics, Condensed Matter
000058048 1001_ $$0P:(DE-HGF)0$$aKever, T.$$b0
000058048 245__ $$aPreparation and characterisation of amorphous Cu: 7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition
000058048 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000058048 300__ $$a1893 - 1896
000058048 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000058048 520__ $$aWe demonstrate a physical vapor deposition process for preparing amorphous Cu:Tetracyanoquinodimethane (Cu:TCNQ) thin films. Samples made by this co-evaporation process exhibit a smooth surface in the scanning electron microscope. Spectroscopic studies confirmed the formation of a charge transfer (CT) complex with a degree of CT of 0.68. Reproducible resistive switching is observed in a glass/NiCr/Al/Cu:TCNQ/Al sandwich structure. OFF/ON ratios of 10 to 10(2) and impedance values between 100 k Omega and 10 M Omega have been measured. Switching voltages for the prepared samples with a film thickness of around 100 run are in the range of 4 +/- 2 V and are fairly symmetrical. The devices have a life time of more than 10(4) switching cycles. (c) 2006 Elsevier B.V. All rights reserved.
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000058048 65320 $$2Author$$aresistive switching
000058048 65320 $$2Author$$aamorphous materials
000058048 65320 $$2Author$$aphysical vapor deposition
000058048 65320 $$2Author$$ascanning electron microscopy
000058048 7001_ $$0P:(DE-Juel1)VDB61380$$aNauenheim, C.$$b1$$uFZJ
000058048 7001_ $$0P:(DE-Juel1)VDB3024$$aBöttger, U.$$b2$$uFZJ
000058048 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000058048 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2006.07.028$$gVol. 515, p. 1893 - 1896$$p1893 - 1896$$q515<1893 - 1896$$tThin solid films$$v515$$x0040-6090$$y2006
000058048 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2006.07.028
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