Journal Article

PreJuSER-58048

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Preparation and characterisation of amorphous Cu: 7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition

Kever, T. ; Nauenheim, C.FZJ* ; Böttger, U.FZJ* ; Waser, R.FZJ*

2006
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.tsf.2006.07.028

Abstract: We demonstrate a physical vapor deposition process for preparing amorphous Cu:Tetracyanoquinodimethane (Cu:TCNQ) thin films. Samples made by this co-evaporation process exhibit a smooth surface in the scanning electron microscope. Spectroscopic studies confirmed the formation of a charge transfer (CT) complex with a degree of CT of 0.68. Reproducible resistive switching is observed in a glass/NiCr/Al/Cu:TCNQ/Al sandwich structure. OFF/ON ratios of 10 to 10(2) and impedance values between 100 k Omega and 10 M Omega have been measured. Switching voltages for the prepared samples with a film thickness of around 100 run are in the range of 4 +/- 2 V and are fairly symmetrical. The devices have a life time of more than 10(4) switching cycles. (c) 2006 Elsevier B.V. All rights reserved.

Keyword(s): J ; resistive switching (auto) ; amorphous materials (auto) ; physical vapor deposition (auto) ; scanning electron microscopy (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: Nachtrag

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