001     58048
005     20180211173302.0
024 7 _ |2 DOI
|a 10.1016/j.tsf.2006.07.028
024 7 _ |2 WOS
|a WOS:000242931900105
037 _ _ |a PreJuSER-58048
041 _ _ |a eng
082 _ _ |a 070
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Kever, T.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Preparation and characterisation of amorphous Cu: 7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2006
300 _ _ |a 1893 - 1896
336 7 _ |a Journal Article
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Thin Solid Films
|x 0040-6090
|0 5762
|v 515
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We demonstrate a physical vapor deposition process for preparing amorphous Cu:Tetracyanoquinodimethane (Cu:TCNQ) thin films. Samples made by this co-evaporation process exhibit a smooth surface in the scanning electron microscope. Spectroscopic studies confirmed the formation of a charge transfer (CT) complex with a degree of CT of 0.68. Reproducible resistive switching is observed in a glass/NiCr/Al/Cu:TCNQ/Al sandwich structure. OFF/ON ratios of 10 to 10(2) and impedance values between 100 k Omega and 10 M Omega have been measured. Switching voltages for the prepared samples with a film thickness of around 100 run are in the range of 4 +/- 2 V and are fairly symmetrical. The devices have a life time of more than 10(4) switching cycles. (c) 2006 Elsevier B.V. All rights reserved.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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653 2 0 |2 Author
|a resistive switching
653 2 0 |2 Author
|a amorphous materials
653 2 0 |2 Author
|a physical vapor deposition
653 2 0 |2 Author
|a scanning electron microscopy
700 1 _ |a Nauenheim, C.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB61380
700 1 _ |a Böttger, U.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3024
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1016/j.tsf.2006.07.028
|g Vol. 515, p. 1893 - 1896
|p 1893 - 1896
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|0 PERI:(DE-600)1482896-0
|t Thin solid films
|v 515
|y 2006
|x 0040-6090
856 7 _ |u http://dx.doi.org/10.1016/j.tsf.2006.07.028
909 C O |o oai:juser.fz-juelich.de:58048
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913 1 _ |k P42
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914 1 _ |a Nachtrag
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915 _ _ |0 StatID:(DE-HGF)0010
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920 1 _ |d 31.12.2006
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|l Elektronische Materialien
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920 1 _ |d 14.09.2008
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