Journal Article

PreJuSER-58106

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Capacitive-resistive nondriven plateline cell architecture for RRAM technology

Mustafa, J. ; Waser, R.FZJ*

2006
Elsevier München

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Please use a persistent id in citations: doi:10.1016/j.aeue.2005.09.005

Abstract: A new memory cell concept, which is appropriate for the use with resistive hysteretic memory elements is introduced. Resistive memories are one of the main memory development streams today. The introduced concept can be used to facilitate the integration with current CMOS technology, where no plateline is required. This is accomplished by using a capacitor, which is serially connected to the resistive element. (c) 2005 Elsevier GmbH. All rights reserved.

Keyword(s): J ; resistive hysteretic elements (auto) ; nondriven plateline (auto) ; nonvolatile (auto) ; RRAM (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Elektronische Materialien (IFF-6)
3. Center of Nanoelectronic Systems for Information Technology (CNI)
4. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: Nachtrag

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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