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000058232 084__ $$2WoS$$aPhysics, Multidisciplinary
000058232 1001_ $$0P:(DE-Juel1)VDB3050$$aPertsev, N. A.$$b0$$uFZJ
000058232 245__ $$aElastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions
000058232 260__ $$aCollege Park, Md.$$bAPS$$c2007
000058232 300__ $$a257603
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000058232 520__ $$aTaking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage.
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000058232 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevLett.98.257603
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