Journal Article

PreJuSER-58232

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions

Pertsev, N. A.FZJ* ; Kohlstedt, H.FZJ*

2007
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7726  doi:10.1103/PhysRevLett.98.257603

Abstract: Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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