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Home > Publications database > Resistive switching in Ge0.3Se0.7 films by means of copper ion migration > Access to Fulltext
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Resistive switching in Ge0.3Se0.7 films by means of copper ion migration - PreJuSER-58290
 
Main document file(s):
      [Zeitschrift fr Physikalische Chemie] Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration
    version 1
    [Zeitschrift fr Physikalische Chemie] Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration.gif (icon) [10.69 KB] 24 Apr 2018, 15:53 OpenAccess
    [Zeitschrift fr Physikalische Chemie] Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration.jpg (icon-180) [21.54 KB] 24 Apr 2018, 15:53 OpenAccess
    [Zeitschrift fr Physikalische Chemie] Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration.jpg (icon-700) [102.18 KB] 24 Apr 2018, 15:53 OpenAccess
    [Zeitschrift fr Physikalische Chemie] Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration.pdf [366.12 KB] 24 Apr 2018, 15:51 OpenAccess
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