Journal Article

PreJuSER-58990

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Deposition of Highly Efficient Microcrystalline Silicon Solar Cells under Conditions of Low H2 Dilution: the Role of the Transient Depletion Induced Incubation Layer

Van den Donker, M.FZJ* ; Rech, B.FZJ* ; Finger, F.FZJ* ; Houben, L.FZJ* ; Kessels, W. M. M. ; van de Sanden, M. C. M.

2007
Wiley Chichester

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Please use a persistent id in citations: doi:10.1002/pip.743

Abstract: This paper addresses the plasma deposition of highly efficient microcrystalline silicon (mu c-Si:H) p-i-n solar cells under conditions of high SiH4 utilization and low H-2 dilution. It was established that the transient depletion of the initially present SiH4 source gas induces the formation of an amorphous incubation layer that prevents successful crystallite nucleation in the i-layer and leads to poor solar cell performance. The effect of this transient depletion induced incubation layer on solar cells was made visible through dedicated solar cell deposition series and selected area electron diffraction measurements. Applying a gas flow procedure at plasma ignition it was succeeded to prepare state-of-the-art mu c-Si:H material and solar cells under low hydrogen dilution conditions, highlighted by mu c-Si:H solar cells of up to 9.5% efficiency prepared using an undiluted source gas flow consisting solely of SiH4. Copyright (c) 2007 John Wiley & Sons, Ltd.

Keyword(s): J ; thin film (auto) ; microcrystalline silicon (auto) ; solar cells (auto) ; plasma enhanced chemical vapor deposition (PECVD) (auto) ; hydrogen dilution (auto) ; incubation layer (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Photovoltaik (IEF-5)

Research Program(s):

1. Erneuerbare Energien (P11)

Appears in the scientific report 2007

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