%0 Journal Article
%A Thomas, R.
%A Bhakta, R.
%A Milanov, A.
%A Devi, A.
%A Ehrhart, P.
%T Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
%J Chemical vapor deposition
%V 13
%@ 0948-1907
%C Weinheim
%I Wiley-VCH
%M PreJuSER-59108
%D 2007
%Z Record converted from VDB: 12.11.2012
%X Ultrathin ZrO2 films were deposited on SiOx/Si in a multiwafer planetary metal-organic (MO)CVD reactor combined with a liquid delivery system. Two different alkoxide-based precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness, density, and crystallization behavior are compared over a wide range of deposition temperatures (400-700 degrees C). In addition, the influence of the solvents, n-butylacetate, toluene, and hexane, is discussed. The best growth results in terms of low temperature deposition rate, surface roughness, film density, and carbon content were obtained for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The electrical properties were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was in the range 17-24, depending on the precursor. Compared to standard SiO2 capacitors of similar equivalent oxide thickness, low leakage currents were obtained.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000245394900006
%R 10.1002/cvde.200606512
%U https://juser.fz-juelich.de/record/59108