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| Home > Publications database > Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors |
| Journal Article | PreJuSER-59108 |
; ; ; ;
2007
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/cvde.200606512
Abstract: Ultrathin ZrO2 films were deposited on SiOx/Si in a multiwafer planetary metal-organic (MO)CVD reactor combined with a liquid delivery system. Two different alkoxide-based precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness, density, and crystallization behavior are compared over a wide range of deposition temperatures (400-700 degrees C). In addition, the influence of the solvents, n-butylacetate, toluene, and hexane, is discussed. The best growth results in terms of low temperature deposition rate, surface roughness, film density, and carbon content were obtained for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The electrical properties were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was in the range 17-24, depending on the precursor. Compared to standard SiO2 capacitors of similar equivalent oxide thickness, low leakage currents were obtained.
Keyword(s): J ; high-k dielectrics (auto) ; metal-organic precursors (auto) ; MOCVD (auto) ; zirconium oxide (auto)
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