000059108 001__ 59108
000059108 005__ 20180211175108.0
000059108 0247_ $$2DOI$$a10.1002/cvde.200606512
000059108 0247_ $$2WOS$$aWOS:000245394900006
000059108 037__ $$aPreJuSER-59108
000059108 041__ $$aeng
000059108 082__ $$a540
000059108 084__ $$2WoS$$aElectrochemistry
000059108 084__ $$2WoS$$aMaterials Science, Coatings & Films
000059108 084__ $$2WoS$$aPhysics, Condensed Matter
000059108 1001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b0$$uFZJ
000059108 245__ $$aThin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
000059108 260__ $$aWeinheim$$bWiley-VCH$$c2007
000059108 300__ $$a
000059108 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000059108 3367_ $$2DataCite$$aOutput Types/Journal article
000059108 3367_ $$00$$2EndNote$$aJournal Article
000059108 3367_ $$2BibTeX$$aARTICLE
000059108 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000059108 3367_ $$2DRIVER$$aarticle
000059108 440_0 $$015041$$aChemical Vapor Deposition$$v13$$x0948-1907$$y2
000059108 500__ $$aRecord converted from VDB: 12.11.2012
000059108 520__ $$aUltrathin ZrO2 films were deposited on SiOx/Si in a multiwafer planetary metal-organic (MO)CVD reactor combined with a liquid delivery system. Two different alkoxide-based precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness, density, and crystallization behavior are compared over a wide range of deposition temperatures (400-700 degrees C). In addition, the influence of the solvents, n-butylacetate, toluene, and hexane, is discussed. The best growth results in terms of low temperature deposition rate, surface roughness, film density, and carbon content were obtained for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The electrical properties were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was in the range 17-24, depending on the precursor. Compared to standard SiO2 capacitors of similar equivalent oxide thickness, low leakage currents were obtained.
000059108 536__ $$0G:(DE-Juel1)FUEK414$$2G:(DE-HGF)$$aKondensierte Materie$$cP54$$x0
000059108 588__ $$aDataset connected to Web of Science
000059108 650_7 $$2WoSType$$aJ
000059108 65320 $$2Author$$ahigh-k dielectrics
000059108 65320 $$2Author$$ametal-organic precursors
000059108 65320 $$2Author$$aMOCVD
000059108 65320 $$2Author$$azirconium oxide
000059108 7001_ $$0P:(DE-HGF)0$$aBhakta, R.$$b1
000059108 7001_ $$0P:(DE-HGF)0$$aMilanov, A.$$b2
000059108 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b3
000059108 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b4$$uFZJ
000059108 773__ $$0PERI:(DE-600)1477693-5$$a10.1002/cvde.200606512$$gVol. 13$$q13$$tChemical vapor deposition$$v13$$x0948-1907$$y2007
000059108 8567_ $$uhttp://dx.doi.org/10.1002/cvde.200606512
000059108 909CO $$ooai:juser.fz-juelich.de:59108$$pVDB
000059108 9131_ $$0G:(DE-Juel1)FUEK414$$bMaterie$$kP54$$lKondensierte Materie$$vKondensierte Materie$$x0$$zentfällt   bis 2009
000059108 9141_ $$y2007
000059108 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000059108 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x1
000059108 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
000059108 970__ $$aVDB:(DE-Juel1)93062
000059108 980__ $$aVDB
000059108 980__ $$aConvertedRecord
000059108 980__ $$ajournal
000059108 980__ $$aI:(DE-Juel1)PGI-7-20110106
000059108 980__ $$aI:(DE-Juel1)VDB381
000059108 980__ $$aUNRESTRICTED
000059108 981__ $$aI:(DE-Juel1)PGI-7-20110106
000059108 981__ $$aI:(DE-Juel1)VDB381