TY  - JOUR
AU  - Thomas, R.
AU  - Bhakta, R.
AU  - Milanov, A.
AU  - Devi, A.
AU  - Ehrhart, P.
TI  - Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
JO  - Chemical vapor deposition
VL  - 13
SN  - 0948-1907
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-59108
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Ultrathin ZrO2 films were deposited on SiOx/Si in a multiwafer planetary metal-organic (MO)CVD reactor combined with a liquid delivery system. Two different alkoxide-based precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness, density, and crystallization behavior are compared over a wide range of deposition temperatures (400-700 degrees C). In addition, the influence of the solvents, n-butylacetate, toluene, and hexane, is discussed. The best growth results in terms of low temperature deposition rate, surface roughness, film density, and carbon content were obtained for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The electrical properties were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was in the range 17-24, depending on the precursor. Compared to standard SiO2 capacitors of similar equivalent oxide thickness, low leakage currents were obtained.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000245394900006
DO  - DOI:10.1002/cvde.200606512
UR  - https://juser.fz-juelich.de/record/59108
ER  -