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@ARTICLE{Thomas:59108,
      author       = {Thomas, R. and Bhakta, R. and Milanov, A. and Devi, A. and
                      Ehrhart, P.},
      title        = {{T}hin {F}ilms of {Z}r{O}2 for {H}igh-k {A}pplications
                      {E}mploying {E}ngineered {A}lkoxide- and {A}mide-{B}ased
                      {MOCVD} {P}recursors},
      journal      = {Chemical vapor deposition},
      volume       = {13},
      issn         = {0948-1907},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-59108},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Ultrathin ZrO2 films were deposited on SiOx/Si in a
                      multiwafer planetary metal-organic (MO)CVD reactor combined
                      with a liquid delivery system. Two different alkoxide-based
                      precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and
                      [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two
                      amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and
                      [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness,
                      density, and crystallization behavior are compared over a
                      wide range of deposition temperatures (400-700 degrees C).
                      In addition, the influence of the solvents, n-butylacetate,
                      toluene, and hexane, is discussed. The best growth results
                      in terms of low temperature deposition rate, surface
                      roughness, film density, and carbon content were obtained
                      for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The
                      electrical properties were investigated with
                      metal-insulator-semiconductor (MIS) capacitors. The relative
                      dielectric permittivity was in the range 17-24, depending on
                      the precursor. Compared to standard SiO2 capacitors of
                      similar equivalent oxide thickness, low leakage currents
                      were obtained.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films /
                      Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000245394900006},
      doi          = {10.1002/cvde.200606512},
      url          = {https://juser.fz-juelich.de/record/59108},
}