Home > Publications database > Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors > print

001     59108
005     20180211175108.0
024 7 _ |2 DOI
|a 10.1002/cvde.200606512
024 7 _ |2 WOS
|a WOS:000245394900006
037 _ _ |a PreJuSER-59108
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Electrochemistry
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Thomas, R.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB35139
245 _ _ |a Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors
260 _ _ |a Weinheim
|b Wiley-VCH
|c 2007
300 _ _ |a
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Chemical Vapor Deposition
|x 0948-1907
|0 15041
|y 2
|v 13
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Ultrathin ZrO2 films were deposited on SiOx/Si in a multiwafer planetary metal-organic (MO)CVD reactor combined with a liquid delivery system. Two different alkoxide-based precursors, [Zr((OPr)-Pr-i)(2)(tbaoac)(2)] and [Zr((OBu)-Bu-i)(2)(tbaoac(2)] are compared with two amide-based precursors, [Zr(NEt2)(2)(dbml)(2)] and [Zr(NEtMe)(2)(guanid)(2)]. Growth rate, surface roughness, density, and crystallization behavior are compared over a wide range of deposition temperatures (400-700 degrees C). In addition, the influence of the solvents, n-butylacetate, toluene, and hexane, is discussed. The best growth results in terms of low temperature deposition rate, surface roughness, film density, and carbon content were obtained for the new [Zr(NEtMe)(2)(guanid)(2)] precursor. The electrical properties were investigated with metal-insulator-semiconductor (MIS) capacitors. The relative dielectric permittivity was in the range 17-24, depending on the precursor. Compared to standard SiO2 capacitors of similar equivalent oxide thickness, low leakage currents were obtained.
536 _ _ |a Kondensierte Materie
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|2 G:(DE-HGF)
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a high-k dielectrics
653 2 0 |2 Author
|a metal-organic precursors
653 2 0 |2 Author
|a MOCVD
653 2 0 |2 Author
|a zirconium oxide
700 1 _ |a Bhakta, R.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Milanov, A.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Devi, A.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Ehrhart, P.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB3072
773 _ _ |a 10.1002/cvde.200606512
|g Vol. 13
|q 13
|0 PERI:(DE-600)1477693-5
|t Chemical vapor deposition
|v 13
|y 2007
|x 0948-1907
856 7 _ |u http://dx.doi.org/10.1002/cvde.200606512
909 C O |o oai:juser.fz-juelich.de:59108
|p VDB
913 1 _ |k P54
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|z entfällt bis 2009
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|x 0
914 1 _ |y 2007
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-6
|l Elektronische Materialien
|d 31.12.2010
|g IFF
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920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
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970 _ _ |a VDB:(DE-Juel1)93062
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980 _ _ |a journal
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980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB381

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