%0 Journal Article
%A Antons, A.
%A Cao, Y.
%A Voigtländer, B.
%A Schroeder, K.
%A Berger, R.
%A Blügel, S.
%T Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb
%J epl
%V 62
%@ 0295-5075
%C Les Ulis
%I EDP Sciences
%M PreJuSER-6135
%P 547 - 553
%D 2003
%Z Record converted from VDB: 12.11.2012
%X STM images of surface structures of an Sb-covered Ge film growing on Si(111):Sb are presented, showing the (root3 x root3) structure on Si(111):Sb, a (6root3x6root3) structure consisting of hexagons with a size of 40 Angstrom with triangular subunits of (1 x 1) structure for the three-monolayer Ge film, and a (2 x 1) Sb-structure for the thick relaxed Ge film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1) chain-reconstruction of Ge(111):Sb has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the (1 x 1) structure becomes stable, for larger compressions the T-4 (root3 x root3) structure does. The observed (1 x 1) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to Si bulk) due to the stress exerted by the Sb atoms on the Ge film and at the rim of the finite hexagons.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000182961600014
%R 10.1209/epl/i2003-00385-6
%U https://juser.fz-juelich.de/record/6135