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| Home > Publications database > Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb |
| Home > Publications database > Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb |
| Journal Article | PreJuSER-6135 |
; ; ; ; ;
2003
EDP Sciences
Les Ulis
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Please use a persistent id in citations: doi:10.1209/epl/i2003-00385-6
Abstract: STM images of surface structures of an Sb-covered Ge film growing on Si(111):Sb are presented, showing the (root3 x root3) structure on Si(111):Sb, a (6root3x6root3) structure consisting of hexagons with a size of 40 Angstrom with triangular subunits of (1 x 1) structure for the three-monolayer Ge film, and a (2 x 1) Sb-structure for the thick relaxed Ge film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1) chain-reconstruction of Ge(111):Sb has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the (1 x 1) structure becomes stable, for larger compressions the T-4 (root3 x root3) structure does. The observed (1 x 1) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to Si bulk) due to the stress exerted by the Sb atoms on the Ge film and at the rim of the finite hexagons.
Keyword(s): J
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