000006135 001__ 6135
000006135 005__ 20180208214829.0
000006135 0247_ $$2DOI$$a10.1209/epl/i2003-00385-6
000006135 0247_ $$2WOS$$aWOS:000182961600014
000006135 0247_ $$2ISSN$$a0295-5075
000006135 037__ $$aPreJuSER-6135
000006135 041__ $$aeng
000006135 082__ $$a530
000006135 084__ $$2WoS$$aPhysics, Multidisciplinary
000006135 1001_ $$0P:(DE-Juel1)VDB3936$$aAntons, A.$$b0$$uFZJ
000006135 245__ $$aStrain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb
000006135 260__ $$aLes Ulis$$bEDP Sciences$$c2003
000006135 300__ $$a547 - 553
000006135 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000006135 3367_ $$2DataCite$$aOutput Types/Journal article
000006135 3367_ $$00$$2EndNote$$aJournal Article
000006135 3367_ $$2BibTeX$$aARTICLE
000006135 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000006135 3367_ $$2DRIVER$$aarticle
000006135 440_0 $$01996$$aEurophysics Letters$$v62$$x0295-5075$$y4
000006135 500__ $$aRecord converted from VDB: 12.11.2012
000006135 520__ $$aSTM images of surface structures of an Sb-covered Ge film growing on Si(111):Sb are presented, showing the (root3 x root3) structure on Si(111):Sb, a (6root3x6root3) structure consisting of hexagons with a size of 40 Angstrom with triangular subunits of (1 x 1) structure for the three-monolayer Ge film, and a (2 x 1) Sb-structure for the thick relaxed Ge film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1) chain-reconstruction of Ge(111):Sb has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the (1 x 1) structure becomes stable, for larger compressions the T-4 (root3 x root3) structure does. The observed (1 x 1) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to Si bulk) due to the stress exerted by the Sb atoms on the Ge film and at the rim of the finite hexagons.
000006135 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000006135 588__ $$aDataset connected to Web of Science
000006135 650_7 $$2WoSType$$aJ
000006135 7001_ $$0P:(DE-Juel1)VDB3935$$aCao, Y.$$b1$$uFZJ
000006135 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b2$$uFZJ
000006135 7001_ $$0P:(DE-Juel1)VDB3933$$aSchroeder, K.$$b3$$uFZJ
000006135 7001_ $$0P:(DE-Juel1)VDB3938$$aBerger, R.$$b4$$uFZJ
000006135 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b5$$uFZJ
000006135 773__ $$0PERI:(DE-600)1465366-7$$a10.1209/epl/i2003-00385-6$$gVol. 62, p. 547 - 553$$p547 - 553$$q62<547 - 553$$tepl$$v62$$x0295-5075$$y2003
000006135 8567_ $$uhttp://dx.doi.org/10.1209/epl/i2003-00385-6
000006135 909CO $$ooai:juser.fz-juelich.de:6135$$pVDB
000006135 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000006135 9141_ $$y2003
000006135 915__ $$0StatID:(DE-HGF)0020$$2StatID$$aNo Peer review
000006135 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000006135 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000006135 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000006135 9201_ $$0I:(DE-Juel1)VDB30$$d31.12.2006$$gIFF$$kIFF-TH-I$$lTheorie I$$x0
000006135 9201_ $$0I:(DE-Juel1)VDB32$$d31.12.2006$$gIFF$$kIFF-TH-III$$lTheorie III$$x1
000006135 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x2
000006135 970__ $$aVDB:(DE-Juel1)11425
000006135 980__ $$aVDB
000006135 980__ $$aConvertedRecord
000006135 980__ $$ajournal
000006135 980__ $$aI:(DE-Juel1)PGI-1-20110106
000006135 980__ $$aI:(DE-Juel1)PGI-2-20110106
000006135 980__ $$aI:(DE-Juel1)PGI-3-20110106
000006135 980__ $$aUNRESTRICTED
000006135 981__ $$aI:(DE-Juel1)PGI-1-20110106
000006135 981__ $$aI:(DE-Juel1)PGI-2-20110106
000006135 981__ $$aI:(DE-Juel1)PGI-3-20110106