TY  - JOUR
AU  - Antons, A.
AU  - Cao, Y.
AU  - Voigtländer, B.
AU  - Schroeder, K.
AU  - Berger, R.
AU  - Blügel, S.
TI  - Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb
JO  - epl
VL  - 62
SN  - 0295-5075
CY  - Les Ulis
PB  - EDP Sciences
M1  - PreJuSER-6135
SP  - 547 - 553
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - STM images of surface structures of an Sb-covered Ge film growing on Si(111):Sb are presented, showing the (root3 x root3) structure on Si(111):Sb, a (6root3x6root3) structure consisting of hexagons with a size of 40 Angstrom with triangular subunits of (1 x 1) structure for the three-monolayer Ge film, and a (2 x 1) Sb-structure for the thick relaxed Ge film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1) chain-reconstruction of Ge(111):Sb has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the (1 x 1) structure becomes stable, for larger compressions the T-4 (root3 x root3) structure does. The observed (1 x 1) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to Si bulk) due to the stress exerted by the Sb atoms on the Ge film and at the rim of the finite hexagons.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000182961600014
DO  - DOI:10.1209/epl/i2003-00385-6
UR  - https://juser.fz-juelich.de/record/6135
ER  -