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@ARTICLE{Antons:6135,
      author       = {Antons, A. and Cao, Y. and Voigtländer, B. and Schroeder,
                      K. and Berger, R. and Blügel, S.},
      title        = {{S}train-induced surface structures on {S}b-covered
                      {G}e(111) : epitaxial {G}e films on {S}i(111):{S}b},
      journal      = {epl},
      volume       = {62},
      issn         = {0295-5075},
      address      = {Les Ulis},
      publisher    = {EDP Sciences},
      reportid     = {PreJuSER-6135},
      pages        = {547 - 553},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {STM images of surface structures of an Sb-covered Ge film
                      growing on Si(111):Sb are presented, showing the (root3 x
                      root3) structure on Si(111):Sb, a (6root3x6root3) structure
                      consisting of hexagons with a size of 40 Angstrom with
                      triangular subunits of (1 x 1) structure for the
                      three-monolayer Ge film, and a (2 x 1) Sb-structure for the
                      thick relaxed Ge film. Using an ab initio total energy and
                      force method, we have investigated the stability of the
                      different structures of Ge(111):Sb(1 ML) as a function of
                      the lateral lattice constant. We find that the (2 x 1)
                      chain-reconstruction of Ge(111):Sb has a range of stability
                      between about $5.5\%$ compression and $1\%$ expansion. For
                      larger dilatations the (1 x 1) structure becomes stable, for
                      larger compressions the T-4 (root3 x root3) structure does.
                      The observed (1 x 1) structure on top of the hexagons can be
                      explained by an $8\%$ dilatation of the surface (compared to
                      Si bulk) due to the stress exerted by the Sb atoms on the Ge
                      film and at the rim of the finite hexagons.},
      keywords     = {J (WoSType)},
      cin          = {IFF-TH-I / IFF-TH-III / ISG-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB30 / I:(DE-Juel1)VDB32 / I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000182961600014},
      doi          = {10.1209/epl/i2003-00385-6},
      url          = {https://juser.fz-juelich.de/record/6135},
}