Home > Publications database > Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb > print

001     6135
005     20180208214829.0
024 7 _ |2 DOI
|a 10.1209/epl/i2003-00385-6
024 7 _ |2 WOS
|a WOS:000182961600014
024 7 _ |2 ISSN
|a 0295-5075
037 _ _ |a PreJuSER-6135
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Antons, A.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB3936
245 _ _ |a Strain-induced surface structures on Sb-covered Ge(111) : epitaxial Ge films on Si(111):Sb
260 _ _ |c 2003
|a Les Ulis
|b EDP Sciences
300 _ _ |a 547 - 553
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Europhysics Letters
|x 0295-5075
|0 1996
|y 4
|v 62
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a STM images of surface structures of an Sb-covered Ge film growing on Si(111):Sb are presented, showing the (root3 x root3) structure on Si(111):Sb, a (6root3x6root3) structure consisting of hexagons with a size of 40 Angstrom with triangular subunits of (1 x 1) structure for the three-monolayer Ge film, and a (2 x 1) Sb-structure for the thick relaxed Ge film. Using an ab initio total energy and force method, we have investigated the stability of the different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1) chain-reconstruction of Ge(111):Sb has a range of stability between about 5.5% compression and 1% expansion. For larger dilatations the (1 x 1) structure becomes stable, for larger compressions the T-4 (root3 x root3) structure does. The observed (1 x 1) structure on top of the hexagons can be explained by an 8% dilatation of the surface (compared to Si bulk) due to the stress exerted by the Sb atoms on the Ge film and at the rim of the finite hexagons.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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700 1 _ |a Cao, Y.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB3935
700 1 _ |a Voigtländer, B.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB5601
700 1 _ |a Schroeder, K.
|b 3
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|0 P:(DE-Juel1)VDB3933
700 1 _ |a Berger, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB3938
700 1 _ |a Blügel, S.
|b 5
|u FZJ
|0 P:(DE-Juel1)130548
773 _ _ |a 10.1209/epl/i2003-00385-6
|g Vol. 62, p. 547 - 553
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|p 547 - 553
|t epl
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|x 0295-5075
856 7 _ |u http://dx.doi.org/10.1209/epl/i2003-00385-6
909 C O |o oai:juser.fz-juelich.de:6135
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913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
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914 1 _ |y 2003
915 _ _ |a No Peer review
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920 1 _ |k IFF-TH-I
|l Theorie I
|d 31.12.2006
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920 1 _ |k IFF-TH-III
|l Theorie III
|d 31.12.2006
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|l Institut für Grenzflächen und Vakuumtechnologien
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