TY  - JOUR
AU  - Schindler, C.
AU  - Weides, M.
AU  - Kozicki, M.K.
AU  - Waser, R.
TI  - Low current resistive switching in Cu-SiO2 cells
JO  - Applied physics letters
VL  - 92
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-61798
SP  - 122910
PY  - 2008
N1  - Record converted from VDB: 12.11.2012
AB  - Resistive switching in Ir/SiO2/Cu memory cells was investigated. The proposed switching mechanism is the formation and dissolution of a Cu filament. Under positive bias, Cu cations migrate through SiO2 and are reduced at the counterelectrode forming a filament. The filament is dissolved under reverse bias. The write current can be reduced down to 10 pA which is four orders of magnitude below published values and shows the potential of extremely low power-consuming memory cells. Furthermore, a comparison of the charge flow in the high resistance state and the energy for writing is given for write currents between 25 pA and 10 nA. (C) 2008 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000254510300070
DO  - DOI:10.1063/1.2903707
UR  - https://juser.fz-juelich.de/record/61798
ER  -