Journal Article

PreJuSER-61798

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Low current resistive switching in Cu-SiO2 cells

Schindler, C.FZJ* ; Weides, M.FZJ* ; Kozicki, M. K. ; Waser, R.FZJ*

2008
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17412  doi:10.1063/1.2903707

Abstract: Resistive switching in Ir/SiO2/Cu memory cells was investigated. The proposed switching mechanism is the formation and dissolution of a Cu filament. Under positive bias, Cu cations migrate through SiO2 and are reduced at the counterelectrode forming a filament. The filament is dissolved under reverse bias. The write current can be reduced down to 10 pA which is four orders of magnitude below published values and shows the potential of extremely low power-consuming memory cells. Furthermore, a comparison of the charge flow in the high resistance state and the energy for writing is given for write currents between 25 pA and 10 nA. (C) 2008 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2008

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Database coverage:

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