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@ARTICLE{Schindler:61798,
      author       = {Schindler, C. and Weides, M. and Kozicki, M.K. and Waser,
                      R.},
      title        = {{L}ow current resistive switching in {C}u-{S}i{O}2 cells},
      journal      = {Applied physics letters},
      volume       = {92},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-61798},
      pages        = {122910},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Resistive switching in Ir/SiO2/Cu memory cells was
                      investigated. The proposed switching mechanism is the
                      formation and dissolution of a Cu filament. Under positive
                      bias, Cu cations migrate through SiO2 and are reduced at the
                      counterelectrode forming a filament. The filament is
                      dissolved under reverse bias. The write current can be
                      reduced down to 10 pA which is four orders of magnitude
                      below published values and shows the potential of extremely
                      low power-consuming memory cells. Furthermore, a comparison
                      of the charge flow in the high resistance state and the
                      energy for writing is given for write currents between 25 pA
                      and 10 nA. (C) 2008 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000254510300070},
      doi          = {10.1063/1.2903707},
      url          = {https://juser.fz-juelich.de/record/61798},
}