%0 Journal Article
%A Symanczyk, R.
%A Bruchhaus, R.
%A Dittrich, R.
%A Kund, M.
%T Investigation of the reliability behavior of conductive-bridging memory cells
%J IEEE Electron Device Letters
%V 30
%@ 0741-3106
%C New York, NY
%I IEEE
%M PreJuSER-6194
%P 876 - 878
%D 2009
%Z Record converted from VDB: 12.11.2012
%X Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000268342400029
%R 10.1109/LED.2009.2024623
%U https://juser.fz-juelich.de/record/6194