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| Home > Publications database > Investigation of the reliability behavior of conductive-bridging memory cells |
| Journal Article | PreJuSER-6194 |
; ; ;
2009
IEEE
New York, NY
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Please use a persistent id in citations: doi:10.1109/LED.2009.2024623
Abstract: Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated.
Keyword(s): J ; CBRAM (auto) ; chalcogenide (auto) ; nonvolatile memory (auto) ; reliability (auto) ; retention (auto)
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