TY  - JOUR
AU  - Symanczyk, R.
AU  - Bruchhaus, R.
AU  - Dittrich, R.
AU  - Kund, M.
TI  - Investigation of the reliability behavior of conductive-bridging memory cells
JO  - IEEE Electron Device Letters
VL  - 30
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-6194
SP  - 876 - 878
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000268342400029
DO  - DOI:10.1109/LED.2009.2024623
UR  - https://juser.fz-juelich.de/record/6194
ER  -