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| 001 | 6194 | ||
| 005 | 20180208203724.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1109/LED.2009.2024623 |
| 024 | 7 | _ | |2 WOS |a WOS:000268342400029 |
| 024 | 7 | _ | |2 ISSN |a 0741-3106 |
| 037 | _ | _ | |a PreJuSER-6194 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 100 | 1 | _ | |a Symanczyk, R. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Investigation of the reliability behavior of conductive-bridging memory cells |
| 260 | _ | _ | |c 2009 |a New York, NY |b IEEE |
| 300 | _ | _ | |a 876 - 878 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a IEEE Electron Device Letters |x 0741-3106 |0 2464 |v 30 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a CBRAM |
| 653 | 2 | 0 | |2 Author |a chalcogenide |
| 653 | 2 | 0 | |2 Author |a nonvolatile memory |
| 653 | 2 | 0 | |2 Author |a reliability |
| 653 | 2 | 0 | |2 Author |a retention |
| 700 | 1 | _ | |a Bruchhaus, R. |b 1 |u FZJ |0 P:(DE-Juel1)130570 |
| 700 | 1 | _ | |a Dittrich, R. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Kund, M. |b 3 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |0 PERI:(DE-600)2034325-5 |a 10.1109/LED.2009.2024623 |g Vol. 30, p. 876 - 878 |p 876 - 878 |q 30<876 - 878 |t IEEE Electron Device Letters |v 30 |x 0741-3106 |y 2009 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/LED.2009.2024623 |
| 909 | C | O | |o oai:juser.fz-juelich.de:6194 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2009 |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
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| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | 1 | _ | |d 31.12.2010 |g IFF |k IFF-6 |l Elektronische Materialien |0 I:(DE-Juel1)VDB786 |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
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| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
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