%0 Journal Article
%A Kügeler, C.
%A Weng, R.
%A Schroeder, H.
%A Symanczyk, R.
%A Majewski, P.
%A Ufert, K.-D.
%A Waser, R.
%T Study on the dynamic resistance switching properties of NiO thin films
%J Thin solid films
%V 518
%@ 0040-6090
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-6195
%P 2258 - 2260
%D 2010
%Z Record converted from VDB: 12.11.2012
%X The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000274812800065
%R 10.1016/j.tsf.2009.10.040
%U https://juser.fz-juelich.de/record/6195