Journal Article

PreJuSER-6195

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Study on the dynamic resistance switching properties of NiO thin films

Kügeler, C.FZJ* ; Weng, R.FZJ* ; Schroeder, H.FZJ* ; Symanczyk, R. ; Majewski, P. ; Ufert, K.-D. ; Waser, R.FZJ*

2010
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.tsf.2009.10.040

Abstract: The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a Storage contact size of 150 nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300 ns) and reliable switching performance at low operating voltages (<2.5 V). Promising results of endurance data (>1000cycles) and retention tests up to 110 degrees C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. (C) 2009 Elsevier B.V. All rights reserved.

Keyword(s): J ; Unipolar resistive switching (auto) ; Resistive random access memory (auto) ; Nickel oxide (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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